Effect of low-energy ion assistance on the properties of sputtered ZrB2 films

Zirconium diboride (ZrB2) films have been deposited by direct current magnetron sputtering (DCMS) from a ZrB2 compound target on Al2O3 (0001) substrates held at 600, 700, 800, and 900 °C, with two different axial magnetic field strengths, 34 104 G, generated using coil surrounding the substrate. Plasma probe measurements show an increase of ion fluxes floating-potential configurations factor 2.8 for G compared to while energy remained relatively constant ?12 eV. Time-of-flight elastic recoil detection analysis (ToF-ERDA) that are highly overstoichiometric B/Zr ratios ?2.4, exhibit ?2.1. The levels oxygen carbon in below 1 at. % irrespective growth conditions. X-ray diffraction (XRD) ?/2? scans, complemented pole figure measurements, reveal all 0001-oriented. XRD scans 000? peak intensities ? (rocking-curve) widths increased crystal quality increasing temperature both strengths. Minimum electrical resistivity ?100 ??cm is achieved independent temperature.